Atom-by-atom simulations of chemical vapor deposition of nanoporous hydrogenated silicon nitride

Journal of Applied Physics

Volumn 107, Issue 8, 2010, Pages

  Houska, J ^a,b   Klemberg Sapieha, J E ^a   Martinu, L ^a  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^b UNIVERSITY OF WEST BOHEMIA   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE OF INCIDENCE; APRIORI; ATOMISTIC CALCULATIONS; COMPLEX RELATIONSHIPS; CORROSION-RESISTANT; DAMAGED LAYERS; DEPOSITION CHARACTERISTICS; DIVERSE APPLICATIONS; GAS MOLECULES; GRADED REFRACTIVE INDICES; HYDROGENATED SILICON; INITIAL STAGES; ION ENERGIES; ION FRACTION; MATERIAL CHARACTERISTICS; MOLECULAR DYNAMICS SIMULATIONS; NANO-POROUS; PARTICLE DEPOSITIONS; PARTICLE FLUXES; PERMEATION BARRIERS; PROCESS PARAMETERS; STICKING COEFFICIENTS;

AMORPHOUS SILICON; CHEMICAL RESISTANT MATERIALS; GAS PERMEABLE MEMBRANES; HYDROGENATION; NANOPORES; OPTICAL COATINGS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PROTECTIVE COATINGS; REFRACTIVE INDEX; SILICON NITRIDE;

FILM GROWTH;

EID: 77952337150     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3371680     Document Type: Article

References (36)

1. G. Aberle, Prog. Photovoltaics PPHOED 1062-7995 8, 473 (2000). 10.1002/1099-159X(200009/10)8:5<473::AID-PIP3373.0.CO;2-D
2. P. Doshi, G. E. Jellison, Jr., and A. Rohatgi, Appl. Opt. APOPAI 0003-6935 36, 7826 (1997). 10.1364/AO.36.007826
3. Z. -T. Jiang, T. Yamaguchi, K. Ohshimo, M. Aoyama, and L. Asinovsky, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 37, 571 (1998). 10.1143/JJAP.37.571
4. H. T. Philipp, K. N. Andersen, W. Svendsen, and H. Ou, Electron. Lett. ELLEAK 0013-5194 40, 419 (2004). 10.1049/el:20040308
5. L. B. Ma, Y. M. Miao, C. R. Li, Y. Q. Wang, and Z. X. Cao, Appl. Phys. Lett. APPLAB 0003-6951 88, 093102 (2006). 10.1063/1.2179613 (Pubitemid 43334459)
6. C. Summonte, R. Rizzoli, R. Galloni, F. Giorgis, F. Giuliani, C. F. Pirri, E. Tresso, A. Desalvo, F. Zignani, and P. Rava, J. Non-Cryst. Solids JNCSBJ 0022-3093 227-230, 1127 (1998). 10.1016/S0022-3093(98)00288-9
7. C. Liu, C. Li, A. Ji, L. Ma, Y. Wang, and Z. Cao, Appl. Phys. Lett. APPLAB 0003-6951 86, 223111 (2005). 10.1063/1.1943499 (Pubitemid 40861626)
8. A. Serpengüzel and S. Tanriseven, Appl. Phys. Lett. APPLAB 0003-6951 78, 1388 (2001). 10.1063/1.1347022
9. R. Vernhes, O. Zabeida, J. E. Klemberg-Sapieha, and L. Martinu, J. Appl. Phys. JAPIAU 0021-8979 100, 063308 (2006). 10.1063/1.2349565 (Pubitemid 44500544)
10. B. Stannowski, J. K. Rath, and R. E. I. Schropp, J. Appl. Phys. JAPIAU 0021-8979 93, 2618 (2003). 10.1063/1.1542658
11. X. -J. Liu, J. -J. Zhang, X. -W. Sun, Y. -B. Pan, L. -P. Huang, and C. -Y. Jin, Thin Solid Films THSFAP 0040-6090 460, 72 (2004). 10.1016/j.tsf.2004. 01.104
12. Z. Yin and F. W. Smith, Phys. Rev. B PRBMDO 0163-1829 42, 3666 (1990). 10.1103/PhysRevB.42.3666
13. E. Bustarret, M. Bensouda, M. C. Habrard, J. C. Bruỳre, S. Poulin, and S. C. Gujrathi, Phys. Rev. B PRBMDO 0163-1829 38, 8171 (1988). 10.1103/PhysRevB.38.8171
14. R. Vernhes, O. Zabeida, J. E. Klemberg-Sapieha, and L. Martinu, Appl. Opt. APOPAI 0003-6935 43, 97 (2004). 10.1364/AO.43.000097
15. C. Mukherjee, C. Anandan, T. Seth, P. N. Dixit, and R. Bhattacharyya, Appl. Phys. Lett. APPLAB 0003-6951 68, 194 (1996). 10.1063/1.116457 (Pubitemid 126684003)
16. A. C. W. Biebericher, J. Bezemer, W. F. van der Weg, and W. J. Goedheer, Appl. Phys. Lett. APPLAB 0003-6951 76, 2002 (2000). 10.1063/1.126235
17. L. J. Overzet and J. T. Verdeyen, Appl. Phys. Lett. APPLAB 0003-6951 48, 695 (1986). 10.1063/1.96746
18. C. Charles and R. W. Boswell, J. Appl. Phys. JAPIAU 0021-8979 84, 350 (1998). 10.1063/1.368034
19. D. L. Smith, J. Vac. Sci. Technol. A JVTAD6 0734-2101 11, 1843 (1993). 10.1116/1.578436
20. N. C. Cooper, M. S. Fagan, C. M. Goringe, N. A. Marks, and D. R. McKenzie, J. Phys.: Condens. Matter JCOMEL 0953-8984 14, 723 (2002). 10.1088/0953-8984/14/4/307 (Pubitemid 34156266)
21. H. U. Jäger and K. Elbe, J. Appl. Phys. JAPIAU 0021-8979 88, 1129 (2000). 10.1063/1.373787
22. E. B. Halac, M. Reinoso, A. G. Dall'Asen, and E. Burgos, Phys. Rev. B PRBMDO 0163-1829 71, 115431 (2005). 10.1103/PhysRevB.71.115431 (Pubitemid 40771247)
23. M. O. Kaukonen and R. M. Nieminen, Surf. Sci. SUSCAS 0039-6028 331-332, 975 (1995). 10.1016/0039-6028(95)00384-3
24. H. Hensel and H. M. Urbassek, Phys. Rev. B PRBMDO 0163-1829 58, 2050 (1998). 10.1103/PhysRevB.58.2050
25. V. I. Ivashchenko, P. E. A. Turchi, V. I. Shevchenko, and O. A. Shramko, Phys. Rev. B PRBMDO 0163-1829 70, 115201 (2004). 10.1103/PhysRevB.70.115201
26. A. Lef̀vre, L. J. Lewis, L. Martinu, and M. R. Wertheimer, Phys. Rev. B PRBMDO 0163-1829 64, 115429 (2001). 10.1103/PhysRevB.64.115429
27. S. J. Plimpton, J. Comput. Phys. JCTPAH 0021-9991 117, 1 (1995). 10.1006/jcph.1995.1039
28. http://lammps.sandia.gov/
29. B. Vessal, M. Amini, and H. Akbarzadeh, J. Chem. Phys. JCPSA6 0021-9606 101, 7823 (1994). 10.1063/1.468275
30. F. de Brito Mota, J. F. Justo, and A. Fazzio, J. Appl. Phys. JAPIAU 0021-8979 86, 1843 (1999). 10.1063/1.370977
31. A. Amassian, M. Svec, P. Desjardins, and L. Martinu, J. Vac. Sci. Technol. A JVTAD6 0734-2101 24, 2061 (2006). 10.1116/1.2348642 (Pubitemid 44733797)
32. W. M. M. Kessels, F. J. H. van Assche, J. Hong, D. C. Schram, and M. C. M. van de Sanden, J. Vac. Sci. Technol. A JVTAD6 0734-2101 22, 96 (2004). 10.1116/1.1631294
33. J. Houska, M. M. M. Bilek, O. Warschkow, D. R. McKenzie, and J. Vlcek, Phys. Rev. B PRBMDO 0163-1829 72, 054204 (2005). 10.1103/PhysRevB.72.054204
34. B. Tuttle and J. B. Adams, Phys. Rev. B PRBMDO 0163-1829 53, 16265 (1996). 10.1103/PhysRevB.53.16265
35. D. L. Smith, A. S. Alimonda, and F. J. von Preissig, J. Vac. Sci. Technol. B JVTBD9 1071-1023 8, 551 (1990). 10.1116/1.585008
36. R. Vernhes, Ph.D. thesis, Ecole Polytechnique Montreal, (2006).