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Applied Physics Letters

Volumn 96, Issue 16, 2010, Pages

Effects of capping HfO2 with multivalent oxides toward reducing the number of charged defects

(1) Umezawa, Naoto a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; CAPPING MATERIALS; CHARGED DEFECTS; DIELECTRIC OXIDES; ELECTRICAL PROPERTY; EUROPIUM OXIDE; OXYGEN ATOM; OXYGEN RESERVOIR; SIMPLE METHOD; STOICHIOMETRIC PHASIS; THERMODYNAMIC INVESTIGATION;

DESORPTION; ELECTRIC PROPERTIES; EUROPIUM; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; OXIDE FILMS; OXIDES;

OXYGEN;

EID: 77951796559 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3409222 Document Type: Article

Times cited : (10)

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