Large misorientation of GaN films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 293-296

  Kusakabe, Kazuhide ^a   Ando, Shizutoshi ^a   Ohkawa, Kazuhiro ^a,b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Pole figure; A3. MOVPE; B1. GaN

Indexed keywords

ANISOTROPY; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SUBSTRATES; X RAY DIFFRACTION;

EPITAXIAL FILMS GROWTH; LATTICE ORIENTATION; POLE FIGURES; SAPPHIRE SUBSTRATES;

CRYSTAL ORIENTATION;

EID: 33846417284     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.095     Document Type: Article

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