Electron microscopy investigation of extended defects in a-plane gallium nitride layers grown on r-plane sapphire by molecular beam epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 12, 2008, Pages 3748-3751

  Smalc Koziorowska, J ^a,d   Komninou, Ph ^a   Sahonta, S L ^a   Kioseoglou, J ^a   Tsiakatouras, G ^b,c   Georgakilas, A ^b,c  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b UNIVERSITY OF CRETE   (Greece)

^c INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^d WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

A PLANES; BASAL STACKING FAULTS; EXTENDED DEFECTS; GAN EPILAYERS; GAN LAYERS; GAN/SAPPHIRE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM; INTERFACIAL LAYERS; INTERFACIAL STRUCTURES; INVERSION DOMAINS; PLANE SAPPHIRES; RF PLASMA SOURCES; SAPPHIRE SURFACES; STACKING FAULT DENSITIES; THREADING DISLOCATION DENSITIES; THREADING DISLOCATIONS;

CORUNDUM; CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOSFET DEVICES; NANOELECTRONICS; NANOTECHNOLOGY; NITRIDES; PLASMA APPLICATIONS; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; STACKING FAULTS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 57349158616     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200780211     Document Type: Conference Paper

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