P-type silicon nanowire-based nano-floating gate memory with Au nanoparticles embedded in Al2O3 gate layers

Solid State Sciences

Volumn 12, Issue 5, 2010, Pages 745-749

  Yoon, Changjoon ^a   Cho, Kyoungah ^a   Lee, Jae Hyun ^b   Whang, Dongmok ^b   Moon, Byung Moo ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

Memory; Nanoparticle; Nanowire; Silicon

Indexed keywords

AU NANOPARTICLE; DE-TRAPPING; ELECTRICAL CHARACTERISTIC; GATE LAYERS; MEMORY; NANOFLOATING GATE MEMORY; P-TYPE SI; P-TYPE SILICON; THRESHOLD VOLTAGE SHIFTS; TOP-GATE;

ELECTRIC WIRE; GOLD ALLOYS; HYSTERESIS; NANOPARTICLES; NANOWIRES; SILICON; THRESHOLD VOLTAGE;

GOLD;

EID: 77951137632     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solidstatesciences.2010.02.026     Document Type: Article

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