Memory characteristics of a self-assembled monolayer of Pt nanoparticles as a charge trapping layer

Nanotechnology

Volumn 19, Issue 30, 2008, Pages

  Choi, Hyejung ^a   Choi, Byung Sang ^b   Kim, Tae Wook ^a   Jung, Seung Jae ^a   Chang, Man ^a   Lee, Takhee ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Chosun University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; NANOPARTICLES; NANOSTRUCTURES; ORGANIC POLYMERS; PLATINUM; SELF ASSEMBLED MONOLAYERS; SILICON COMPOUNDS;

ALCOHOL REDUCTIONS; CHARGE TRAPPING LAYERS; NARROW SIZE DISTRIBUTIONS; NON-VOLATILE MEMORY (NVM); PT NANO-PARTICLES; SELF ASSEMBLED MONOLAYER (SAMS);

CHARGE TRAPPING;

PLATINUM; SILICON DIOXIDE;

ARTICLE; DEVICE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRICITY; HYDROGEN BOND; HYSTERESIS; PARTICLE SIZE; PRIORITY JOURNAL; REDUCTION; SEMICONDUCTOR; SYNTHESIS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 47249157136     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/30/305704     Document Type: Article

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