Electrical characteristics of Si-nanoparticle/Si-nanowire-based field-effect transistors

Journal of Materials Science

Volumn 43, Issue 10, 2008, Pages 3424-3428

  Kang, Jeongmin ^a   Keem, Kihyun ^a   Jeong, Dong Young ^a   Park, Miyoung ^b   Whang, Dongmok ^b   Kim, Sangsig ^a  

^a Korea University   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRIC PROPERTIES; GATE DIELECTRICS; HYSTERESIS LOOPS; NANOWIRES;

ELECTRICAL CHARACTERISTICS; GATE GEOMETRY; GATE VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 42149188896     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-007-2310-6     Document Type: Conference Paper

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