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Volumn 256, Issue 16, 2010, Pages 5069-5075

Structural and electrical characterization of the nickel silicide films formed at 850 °C by rapid thermal annealing of the Ni/Si(1 0 0) films

Author keywords

Nickel di silicide; Rapid thermal annealing (RTA); RBS; SEM; Sheet resistance; Thickness dependent silicide formation; X SEM and AFM techniques; XRD

Indexed keywords

FILM THICKNESS; GRAIN BOUNDARIES; NICKEL COMPOUNDS; RAPID THERMAL ANNEALING; RUBIDIUM; SCANNING ELECTRON MICROSCOPY; SHEET RESISTANCE; SILICIDES;

EID: 77950918130     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.03.062     Document Type: Article
Times cited : (19)

References (33)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.