In situ study of the growth kinetics and interfacial roughness during the first stages of nickel-silicide formation

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2253-2257

  Ehouarne, L ^a   Putero, M ^a   Mangelinck, D ^a   Nemouchi, F ^a   Bigault, T ^b   Ziegler, E ^c   Coppard, R ^d  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b INSTITUT LAUE LANGEVIN   (France)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^d ATMEL Rousset   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; CRYSTALLIZATION; NICKEL COMPOUNDS; SURFACE ROUGHNESS; VLSI CIRCUITS; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS PHASE; METASTABLE AMORPHOUS ALLOYS; NICKEL-SILICIDE;

GROWTH KINETICS;

EID: 33751232045     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.10.014     Document Type: Article

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