Spectroscopic ellipsometry investigation of nickel silicide formation by rapid thermal process

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1820-1824

  Hu, Yaozhi ^a   Tay, Sing Pin ^a  

^a A G Associates   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESTRUCTIVE TECHNIQUES; ENERGY DISPERSIVE X-RAY SPECTROMETRY; EXPERIMENTAL DATA; INTERMETALLIC GROWTH; LINEWIDTH DEPENDENCE; MICROELECTRONICS FABRICATION; NICKEL SILICIDE; NICKEL SUICIDE; NON DESTRUCTIVE; PHASE SEQUENCE; PHYSICAL PICTURES; RAPID THERMAL PROCESS; RUTHERFORD BACK-SCATTERING; SILICIDATION; SILICIDATION TEMPERATURE; SILICIDE FILMS; SINGLE CRYSTALLINE SILICON;

COBALT; ELECTRIC RESISTANCE; MICROELECTRONICS; NICKEL; NICKEL ALLOYS; RAPID THERMAL PROCESSING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SHEET RESISTANCE; SILICIDES; SPECTROSCOPIC ELLIPSOMETRY; SPONTANEOUS EMISSION; TITANIUM; TITANIUM COMPOUNDS;

SILICON WAFERS;

EID: 0242368709     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581114     Document Type: Article

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