Study of surface segregation of Si on palladium suicide using Auger electron spectroscopy

Journal of Physics D: Applied Physics

Volumn 37, Issue 22, 2004, Pages 3140-3144

  Abhaya, S ^a   Amarendra, G ^a   Gopalan, Padma ^a   Reddy, G L N ^a   Saroja, S ^a  

^a INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DIFFUSION; ENERGY DISPERSIVE SPECTROSCOPY; PALLADIUM COMPOUNDS; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); STOICHIOMETRY; X RAY DIFFRACTION ANALYSIS;

ANNEALING TEMPERATURES; CONCENTRATION GRADIENTS; SEMICONDUCTOR DEVICE FABRICATION; SURFACE SEGREGATION;

SILICON;

EID: 10044241888     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/37/22/013     Document Type: Article

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