Scattering mechanisms and anomalous conductivity of heavily N-doped 3C-SiC in ultraviolet region

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 374, Issue 22, 2010, Pages 2286-2289

  Wang, Jun Jun ^a   Fang, Xiao Yong ^a   Feng, Gui Ying ^a   Song, Wei li ^b   Hou, Zhi Ling ^b   Jin, Hai Bo ^b   Yuan, Jie ^c   Cao, Mao Sheng ^b  

^a YANSHAN UNIVERSITY   (China)

^b BEIJING INSTITUTE OF TECHNOLOGY   (China)

^c MINZU UNIVERSITY OF CHINA   (China)

Author keywords

Conductivity; First principles calculations; N doped 3C SiC; Scattering mechanisms

Indexed keywords

BAND STRUCTURE; CALCULATIONS; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON SCATTERING; IONIZATION; SILICON;

ANOMALOUS CONDUCTIVITY; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES DENSITY-FUNCTIONAL METHOD; IONIZED IMPURITY SCATTERING; N-DOPED; NEUTRAL IMPURITY SCATTERING; OPTICAL WAVE SCATTERING; SCATTERING MECHANISMS;

SILICON CARBIDE;

EID: 77950595617     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2010.03.043     Document Type: Article

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