Reduced electrical resistivity of reaction-sintered SiC by nitrogen doping

Journal of Materials Research

Volumn 23, Issue 4, 2008, Pages 1020-1025

  Jeon, Young Sam ^a,b   Shin, Hyunho ^c   Lee, Young Hyun ^a   Kang, Sang Won ^b  

^a LG Electronics Inc   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Gangneung Wonju National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; NITROGEN; SINTERING;

NITROGEN HEAT TREATMENT;

SILICON CARBIDE;

EID: 42949089785     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2008.0144     Document Type: Article

References (26)

1. G.G. Trantina and R.L. Mehan: High-temperature time-dependent strength of an Si/SiC composite. J. Am. Ceram. Soc. 60, 177 (1977).
2. R.L. Mehan: Effect of SiC content and orientation on the properties of Si/SiC ceramic composite. J. Mater. Sci. 13, 358 (1978).
3. W.B. Hilling, R.L. Mehan, C.R. Morelock, V.J. Decarlo, and W. Laskow: Silicon/silicon carbide composite. Am. Ceram. Bull. 54, 1054 (1975).
4. K.L. Luthra, R.N. Singh, and M.K. Brun: Toughened silicomp composites - process and preliminary properties. Am. Ceram. Soc. Bull. 72, 79 (1993).
5. W.B. Hilling: Making ceramic composites by melt infiltration. Am. Ceram. Soc. Bull. 73, 56 (1994).
6. O. Fumio: Method of producing silicon carbide sintered body for heater, U.S. Patent No. 2007117722 (2007).
7. Z. Tian, N.R. Quick, and A. Kar: Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide. Acta Mater. 54, 4273 (2006).
8. L.V. Azaroff: Elements of X-ray Crystallography (McGraw-Hill Book Co, New York, 1968).
9. N.W. Jepps: Polytypism and polytype transformations in silicon carbide. Ph.D. Thesis, University of Cambridge, 1979.
10. C-B. Lim and T. Iseki: Formation and transportation of intergranular and nodular fine-grained β-SiC in reaction-sintered SiC. Adv. Ceram. Mater. 3, 590 (1988).
11. F. van Dijen, U. Vogt, and D. Overturf: A comparative study of the sintering of alpha and beta silicon carbide, in Structural Ceramics and Composites: Euro Ceramics II, Vol. 2, edited by G. Ziegler and H. Hausner (DKG, Cologne, Germany, 1993), pp. 781-790.
12. V. Heine: The preference of silicon carbide for growth in the metastable cubic form. J. Am. Ceram. Soc. 74, 2630 (1991).
13. A.R. Kieffer, P. Ettmayer, E. Angel, and A. Schmidt: Phase stability of silicon carbide in the ternary system Si-C-N. Mater. Res. Bull. 4, S153 (1969); Proc. Silicon Carbide International Conference (University Park, PA, Oct 20-23, 1968).
14. N.W. Jepps and T.F. Page: The 6H → 3C "reverse" transformation in silicon carbide compacts. J. Am. Ceram. Soc. 64, C-177 (1981).
15. M. Nader and F. Aldinger: Influence of the α/β-SiC phase transformation on microstructure development and mechanical properties of liquid phase sintered silicon carbide. J. Mater. Sci. 34, 1197 (1999).
16. Y-W. Kim: Fine-grained silicon carbide ceramics with oxynitride glass. J. Am. Ceram. Soc. 82, 2731 (1999).
17. S. Turan and K.M. Knowles: α → β reverse phase transformation in silicon carbide in silicon nitride-particulate-reinforced-silicon carbide composites. J. Am. Ceram. Soc. 79, 2892 (1996).
18. W.F. Knippenberg and G. Verspui: The influence of impurities on the growth of silicon carbide by recrystallization. Mater. Res. Bull. 4, S45 (1969); Proc. Silicon Carbide International Conference (University Park, PA, Oct 20-23, 1968).
19. 3. Mater. Sci. Forum 457-460, 1549 (2004).
20. f system and the self-propagating high-temperature synthesis of silicon carbide. Ceram. Int. 13, 63 (1987).
21. R. Pampuch, E. Walaseki, and J. Bialoskoreki: Reaction mechanism in carbon-liquid silicon systems at elevated temperatures. Ceram. Int. 12, 99 (1986).
22. D. Hary and R.F. Davis: Investigation of grain-boundary segregation in ceramic oxides by analytical scanning transmission electron microscopy. J. Am. Ceram. Soc 63, 546 (1980).
23. T. Marushima, N. Ueda, M. Takeichi, F. Ishii, and Y. Iguchi: Nitrogen solubility in liquid silicon. Mater. Trans. 35, 821 (1994).
24. R.I. Scace and G.A. Slack: Solubility of carbon in silicon and germanium. J. Chem. Phys. 30, 1551 (1959).
25. A. Can, D.S. McLachlan, G. Sauti, and M. Herrmann: Relationship between microstructure and electrical properties of liquid-phase sintered silicon carbide materials using impedance spectroscopy. J. Eur. Ceram. Soc. 27, 1362 (2007).
26. K. Pelissier, T. Chartier, and J.M. Laurent: Silicon carbide heating elements. Ceram. Int. 24, 371 (1998).