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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 8, 2001, Pages 852061-8520617

Electronic structure of the N donor center in 4H-SiC and 6H-SiC

(5) Duijn Arnold, A a Zondervan, R a Schmidt, J a Baranov, P G b Mokhov, E N b

a LEIDEN UNIVERSITY (Netherlands)

b IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON 13; NITROGEN; SILICON; SILICON CARBIDE;

ANALYTIC METHOD; ANISOTROPY; ARTICLE; CALCULATION; CRYSTAL STRUCTURE; ELECTRON; ELECTRON NUCLEAR DOUBLE RESONANCE; ELECTRON SPIN RESONANCE; STRUCTURE ANALYSIS;

EID: 0035881085 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.64.085206 Document Type: Article

Times cited : (42)

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