Step-flow growth of ZnO(0 0 0 1) on GaN(0 0 0 1) by metalorganic chemical vapor epitaxy

Journal of Crystal Growth

Volumn 310, Issue 15, 2008, Pages 3407-3412

  Ive, T ^a   Ben Yaacov, T ^a   Van de Walle, C G ^a   Mishra, U K ^a   DenBaars, S P ^a   Speck, J S ^a  

^a University of California   (United States)

Author keywords

A1. Crystal morphology; A1. Crystal structure; A1. High resolution X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Oxides

Indexed keywords

CHEMICAL PROPERTIES; CHEMICAL VAPOR DEPOSITION; COMPUTER NETWORKS; CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLIZING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SULFUR COMPOUNDS; VAPORS; ZINC ALLOYS; ZINC OXIDE;

(PL) PROPERTIES; CHEMICAL VAPORS; GAN (0 0 0 1); RING OPERATOR; STEP-FLOW GROWTH; TWO STEP GROWTH;

MICROFLUIDICS;

EID: 46749144878     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.04.032     Document Type: Article

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