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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 47, Issue 8 PART 1, 2008, Pages 6251-6255

Characterization of thermal annealed n-ZnO/p-GaN/Al2O 3

(6) Lee, Ju Young a Kim, Hong Seung a Cho, Hyung Koun b Kim, Young Yi b Kong, Bo Hyun b Lee, Ho Seong c

a Korea Maritime University (South Korea)

b Sungkyunkwan University (South Korea)

c Kyungpook National University (South Korea)

Author keywords

AES; Gan; TEM; Thermal annealing; ZnO

Indexed keywords

ANNEALING; ATOMIC SPECTROSCOPY; AUGER ELECTRON SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LUMINESCENCE; METALLIC FILMS; MICROSCOPIC EXAMINATION; OPTICAL MATERIALS; OPTICAL PROPERTIES; OXIDE FILMS; OXYGEN; PHASE INTERFACES; PHOTODEGRADATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; X RAY ANALYSIS; ZINC; ZINC ALLOYS; ZINC OXIDE;

AES; GAN; TEM; THERMAL ANNEALING; ZNO;

OPTICAL FILMS;

EID: 55149085475 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.6251 Document Type: Article

Times cited : (9)

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