Structural and optical properties of nearly stress-free m-plane ZnO film on (1 0 0) γ-LiAlO 2 with a GaN buffer layer by metal-organic chemical vapor deposition

Applied Surface Science

Volumn 255, Issue 22, 2009, Pages 9146-9148

  Lin, Hui ^a,b   Zhou, Shengming ^a   Teng, Hao ^a,b   Hou, Xiaorui ^a,b   Jia, Tingting ^a,b   Gu, Shulin ^c   Zhu, Shunming ^c   Xie, Zili ^c   Han, Ping ^c   Zhang, Rong ^c   Xu, Ke ^d  

^a SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c NANJING UNIVERSITY   (China)

^d SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

Chemical vapor deposition; m Plane ZnO thin film; Photoluminescence spectra; Residual stress; Semiconductor compounds

Indexed keywords

ALUMINUM COMPOUNDS; BUFFER LAYERS; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; GAMMA RAYS; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; INDUSTRIAL CHEMICALS; MAGNETIC SEMICONDUCTORS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTOLUMINESCENCE; RESIDUAL STRESSES; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; ZINC OXIDE;

EPITAXIAL RELATIONSHIPS; GAN BUFFER LAYERS; HIGHLY STRAINED; PHOTOLUMINESCENCE SPECTRUM; SEMICONDUCTOR COMPOUNDS; STRUCTURAL AND OPTICAL PROPERTIES; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES; ZNO THIN FILM;

LITHIUM COMPOUNDS;

EID: 68649116205     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.06.127     Document Type: Article

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