Strain distribution analysis in Si/SiGe line structures for CMOS technology using Raman spectroscopy

Journal of Physics: Conference Series

Volumn 209, Issue , 2010, Pages

  Hecker, M ^a   Roelke, M ^a   Hermann, P ^a,b   Zschech, E ^a   Vartanian, V ^c  

^a GLOBALFOUNDRIES   (Germany)

^b Fraunhofer Center Nanoelectronic Technologies   (Germany)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPRESSIVE STRESS; FIELD EFFECT SEMICONDUCTOR DEVICES; FIELD EFFECT TRANSISTORS; FINITE ELEMENT METHOD; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; RAMAN SPECTROSCOPY; SEMICONDUCTOR DEVICES; SILICON; SILICON ALLOYS; STRAINED SILICON; STRUCTURAL OPTIMIZATION;

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; RAMAN MEASUREMENTS; SILICON GERMANIUM; SPATIAL RESOLUTION; STRAIN DISTRIBUTIONS; STRAIN INFORMATION; SUPERIOR RESOLUTION; TIP-ENHANCED RAMAN SCATTERINGS;

SEMICONDUCTING SILICON;

EID: 77950485741     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/209/1/012008     Document Type: Conference Paper

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