Asymmetric relaxation of SiGe in patterned Si line structures

AIP Conference Proceedings

Volumn 931, Issue , 2007, Pages 220-225

  Wormington, Matthew ^a   Lafford, Tamzin ^b   Godny, Stéphane ^b   Ryan, Paul ^b   Loo, Roger ^c   Hikavyy, Andriy ^c   Bhouri, Nada ^c,d   Caymax, Matty ^c  

^a Bede Scientific Inc   (United States)

^b Bede plc   (United Kingdom)

^c IMEC   (Belgium)

^d GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

Ge Si alloys; Semiconductor materials; Silicon; Stress relaxation; X ray diffraction

Indexed keywords

EID: 35348894376     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2799374     Document Type: Conference Paper

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