Strain mapping in MOSFETS by high-resolution electron microscopy and electron holography

Materials Science and Engineering: B

Volumn 154-155, Issue 1-3, 2008, Pages 221-224

  Hüe, Florian ^a   Hytch, Martin ^a   Houdellier, Florent ^a   Snoeck, Etienne ^a   Claverie, Alain ^a  

^a CEMES CNRS   (France)

Author keywords

Electron holography; Electron microscopy; Strain metrology; Strained silicon

Indexed keywords

ELECTRON HOLOGRAPHY; ELECTRONS; FINITE ELEMENT METHOD; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAPPING; MOSFET DEVICES; STRAIN;

ABERRATION-CORRECTED; FIELD OF VIEWS; GEOMETRIC PHASE ANALYSIS; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOSFETS; NANO-METER-SCALE; SIGNAL TO NOISE; STRAIN MAPPING; STRAIN METROLOGY; STRAINED-SILICON;

SIGNAL TO NOISE RATIO;

EID: 56949092340     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.10.020     Document Type: Article

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