Stresses in strained GeSi stripes and quantum structures: Calculation using the finite element method and determination using micro-Raman and other measurements

Thin Solid Films

Volumn 292, Issue 1-2, 1997, Pages 218-226

  Jain, S C ^a   Maes, H E ^a   Pinardi, K ^a  

^a IMEC   (Belgium)

Author keywords

Computer simulation; Germanium; Quantum effects; Silicon; Stress

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; ELASTIC MODULI; FINITE ELEMENT METHOD; HETEROJUNCTIONS; RAMAN SPECTROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; STRESS CONCENTRATION; STRESS RELAXATION; STRESSES; SUBSTRATES;

GERMANIUM SILICIDE; LATTICE MISMATCH; SILICON SUBSTRATES;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0031553453     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09104-3     Document Type: Article

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