High performance single grain Si TFTs inside a location-controlled grain by μ-Czochralski process with capping layer

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 919-922

  Vikas, Rana ^a   Ishihara, Ryoichi ^a   Hiroshima, Yasushi ^b   Abe, Daisuke ^b   Inoue, Satoshi ^b   Shimoda, Tatsuya ^b   Metselaar, J W ^a   Beenakker, C I M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b SEIKO EPSON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTALLIZATION; EXCIMER LASERS; GRAIN SIZE AND SHAPE; SILICA;

GATE OXIDE; LOCATION CONTROLLED GRAINS; SINGLE GRAIN SI THIN FILM TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 33847761822     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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2. V. Rana, R. Ishihara, Y. Hiroshima, D. Abe, S. Inoue, T. Shimoda, J.W.Metselaar and C. I. M Beenakker, "High performance TFTs fabricated inside a location-controlled grain by μ-Czochralski process" International Meeting on Information Display and Exhibition (IMID) 2003, pp.237-240.
3. th Annual Workshop on Semiconductor Advances for Future Electronics, SAFE, Veldhoven, The Netherlands, Nov. 2001, pp.51-53.
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5. S. Yoshimoto, Chang-Ho Oh and M. Matsumura, "A new sample structure for position-controlled giant grain growth of silicon using phase-modulated excimer-laser annealing", Jpn. J. Appl. Phys. Vol. 40(2001) pp. 4446-4469.
6. M. Zeman, J. A. Willemen, L. L. A. Vosteen, G. Tao and J. W. Metselaar, "Computer modeling of current matching in a-Si : H/a-Si : H tandem solar cells on textured TCO substrates", Solar Energy Mater. Solar Cells 46(1997) pp. 81-99.
7. 2 capping layer on a laser crystallization of a-Si thin film" Mat. Res. Soc. Symp. Proc. Vol. 762, 2003.