Tensile-strained single-crystal Si film on insulator by epitaxially seeded and laser-induced lateral crystallization

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 10 A, 2006, Pages 7682-7684

  Cho, Hans S ^a   Xianyu, Wenxu ^a   Zhang, Xiaoxin ^a   Yin, Huaxiang ^a   Noguchi, Takashi ^a,b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b UNIVERSITY OF THE RYUKYUS   (Japan)

Author keywords

Laser crystallization; Selective epitaxy; SOI; Stacked IC; Strained silicon

Indexed keywords

CRYSTALLIZATION; EPITAXIAL GROWTH; EXCIMER LASERS; LASER PULSES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SINGLE CRYSTALS; TENSILE STRAIN;

LASER CRYSTALLIZATION; SELECTIVE EPITAXY; STRAINED SILICON;

THIN FILMS;

EID: 34547869268     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.7682     Document Type: Article

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