Single-grain Si thin-film transistors SPICE model, analog and RF circuit applications

Solid-State Electronics

Volumn 52, Issue 9, 2008, Pages 1345-1352

  Baiano, A ^a   Danesh, M ^a   Saputra, N ^a   Ishihara, R ^a   Long, J ^a   Metselaar, W ^a   Beenakker, C I M ^a   Karaki, N ^b   Hiroshima, Y ^b   Inoue, S ^b  

^a Department of Microelectronics   (Netherlands)

^b SEIKO EPSON Cooperation   (Japan)

Author keywords

Czochralski process; BSIMSOI modified model; Operational amplifier; RF amplifier; Single grain thin film transistor; Voltage reference

Indexed keywords

AMPLIFIERS (ELECTRONIC); ANALOG CIRCUITS; CELLULAR RADIO SYSTEMS; CMOS INTEGRATED CIRCUITS; DENSITY (SPECIFIC GRAVITY); ELECTRIC CURRENT REGULATORS; ELECTRONICS ENGINEERING; FREQUENCY CONVERTER CIRCUITS; GARNETS; NETWORKS (CIRCUITS); OPERATIONAL AMPLIFIERS; OPTICAL DESIGN; POWER SUPPLY CIRCUITS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON; TECHNOLOGY; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

BSIMSOI MODIFIED MODEL; CASCODE; CIRCUIT APPLICATIONS; CMOS VOLTAGE REFERENCE; CZOCHRALSKI PROCESS; ELECTRONIC SYSTEMS; FLEXIBLE SUBSTRATES; LOW MANUFACTURING COST; OPERATIONAL AMPLIFIER; POWER-SUPPLY-REJECTION RATIO; PROCESSING TEMPERATURES; RF AMPLIFIER; RF CIRCUITS; SINGLE-GRAIN THIN-FILM TRANSISTOR; SPICE MODELING; SYSTEM IN PACKAGING; TWO STAGES; UNITY GAIN BAND WIDTH; UNITY-GAIN FREQUENCIES; VOLTAGE REFERENCE;

SPICE;

EID: 50349094812     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.04.004     Document Type: Article

References (18)

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