Analysis by high-resolution electron microscopy of elastic strain in thick InAs layers embedded in Ga0.47In0.53As buffers on InP(0 0 1) substrate

Acta Materialia

Volumn 58, Issue 9, 2010, Pages 3238-3246

  Gatel, C ^a,b   Tang, H ^a,b   Crestou, C ^a,b   Ponchet, A ^a,b   Bertru, N ^c   Dore F ^c   Folliot, H ^c  

^a CEMES CNRS   (France)

^b UNIVERSITÉ PAUL SABATIER   (France)

^c UNIVERSITÉ DE RENNES 1   (France)

Author keywords

Epitaxial strain; Finite element modeling (FEM); High resolution electron microscopy (HREM); Molecular beam epitaxy (MBE); Semiconductor compounds

Indexed keywords

ELASTIC STRAIN; EPITAXIAL STRAIN; FINITE ELEMENT MODELING; INAS; INP; NANOMETRICS; OUT-OF-PLANE; RELAXATION EFFECT; SEMICONDUCTOR COMPOUNDS; SIGNIFICANT SURFACES; STRAINED LAYERS; THEORETICAL VALUES; THIN FOIL EFFECT; THREE DIMENSIONAL FINITE ELEMENTS; TWO-DIMENSIONAL GROWTH;

ELECTRONS; EPITAXIAL GROWTH; FINITE ELEMENT METHOD; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLAYERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SURFACE RELAXATION; THREE DIMENSIONAL; TRANSMISSION ELECTRON MICROSCOPY; TWO DIMENSIONAL;

HIGH RESOLUTION ELECTRON MICROSCOPY;

EID: 77950072700     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2010.01.047     Document Type: Article

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