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EPJ Applied Physics

Volumn 26, Issue 2, 2004, Pages 87-94

TEM measurement of the misfit stress by a curvature method in semiconducting epitaxial system

(3) Ponchet, A a Cabie M a Rocher, A a

a CEMES CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTIC MODULI; ELASTICITY; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; POISSON RATIO; RELAXATION PROCESSES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

CURVATURE ANALYSIS; LATTICE MISMATCH; MISFIT STRESS; PLASTIC RELAXATION; STONEY FORMULA;

STRESSES;

EID: 1942436327 PISSN: 12860042 EISSN: None Source Type: Journal
DOI: 10.1051/epjap:2004026 Document Type: Article

Times cited : (6)

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