Impact of column bending in high-resolution transmission electron microscopy on the strain evaluation of GaAs/InAs/GaAs heterostructures

Ultramicroscopy

Volumn 83, Issue 1-2, 2000, Pages 111-128

  Tillmann, K ^a   Lentzen, M ^b   Rosenfeld, R ^b  

^a UNIVERSITY OF KIEL   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Finite element simulations; High resolution transmission electron microscopy; Strain mapping; Thin foil relaxation

Indexed keywords

COMPUTER SIMULATION; CRYSTAL LATTICES; FINITE ELEMENT METHOD; HETEROJUNCTIONS; HIGH RESOLUTION ELECTRON MICROSCOPY; IMAGE ANALYSIS; IMAGE QUALITY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN MEASUREMENT;

HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM ARSENIDE; LATTICE FRINGE SPACINGS; STRAIN MAPPING; THIN-FOIL RELAXATION;

TRANSMISSION ELECTRON MICROSCOPY;

ACCURACY; ARTICLE; CRYSTALLIZATION; FINITE ELEMENT ANALYSIS; FOIL; IMAGING; QUANTITATIVE ASSAY; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0034074868     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(99)00175-8     Document Type: Article

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