Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001)

Applied Physics Letters

Volumn 89, Issue 12, 2006, Pages

  Dupuy, E ^a   Regreny, P ^a   Robach, Y ^a   Gendry, M ^a   Chauvin, N ^b   Tranvouez, E ^b   Bremond, G ^b   Bru Chevallier, C ^b   Patriarche, G ^c  

^a ECOLE CENTRALE DE LYON   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY;

INP CAPPING; MICROPHOTOLUMINESCENCE; SPATIAL CONFINEMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33748961882     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2354010     Document Type: Article

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