Geometrical criteria required for the determination of the epitaxial stress from the transmission electron microscopy curvature method

Applied Physics Letters

Volumn 86, Issue 19, 2005, Pages 1-3

  Cabi M ^a   Ponchet, A ^a   Rocher, A ^a   Durand, L ^a   Altibelli, A ^a  

^a CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FINITE ELEMENT METHOD; POISSON RATIO; ROTATION; SEMICONDUCTING GALLIUM COMPOUNDS; STRESS ANALYSIS; STRESS RELAXATION; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL STRESS; ISOTROPY; LATTICE MISMATCH; LINEAR CALCULATION;

MOLECULAR BEAM EPITAXY;

EID: 20844462882     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1900306     Document Type: Article

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