Modulation doped structure with thick strained InAs channel beyond the critical thickness

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 782-785

  Nakayama, T ^a   Miyamoto, H ^a  

^a Kansai Electronics Research Lab   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

INDIUM ALUMINUM ARSENIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032690024     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01469-9     Document Type: Article

References (7)

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2. Nguyen L.D., Brown A.S., Thompson M.A., Jelloian L.M. IEEE Trans. Electron Devices. 39:1992;2007.
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6. T. Nakayama, H. Miyamoto, Proceedings of the Eighth International Conference on Indium Phosphide and Related Materials, 1996, p. 614.
7. T. Nakayama, H. Miyamoto, Proceedings of the Tenth International Conference on Indium Phosphide and Related Materials, 1998, p. 112.