High power GaN-HEMT SPDT switches for Microwave applications

International Journal of RF and Microwave Computer-Aided Engineering

Volumn 19, Issue 5, 2009, Pages 598-606

  Bettidi, Andrea ^a   Cetronio, Antonio ^a   Ciccognani, Walter ^b   De Dominicis, Marco ^c   Lanzieri, Claudio ^a   Limiti, Ernesto ^b   Manna, Antonio ^c   Peroni, Marco ^a   Proietti, Claudio ^a   Romanini, Paolo ^a  

^a SELEX SISTEMI INTEGRATI   (Italy)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

^c Elettronica SpA   (Italy)

Author keywords

AlGaN GaN; Monolithic microwave integrated circuit (mmic); Power switch

Indexed keywords

ALGAN/GAN; CONTROL VOLTAGES; FABRICATION YIELD; GAN HEMTS; HIGH-POWER; INPUT SIGNAL; MICROWAVE APPLICATIONS; MMIC SWITCHES; ON-WAFER TESTS; POWER MEASUREMENT; POWER PERFORMANCE; POWER SWITCH; STATE-OF-THE-ART PERFORMANCE; WIDE-BAND; X-BAND SWITCHES;

BANDWIDTH COMPRESSION; ELECTRIC POTENTIAL; ELECTRONIC EQUIPMENT TESTING; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; MICROWAVE CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; MICROWAVES; SEMICONDUCTING GALLIUM; SWITCHES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 68849094781     PISSN: 10964290     EISSN: 1099047X     Source Type: Journal    
DOI: 10.1002/mmce.20383     Document Type: Article

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