Drivability enhancement for AIGaN/GaN high-electron mobility transistors with AIN spacer layer using Si lon implantation doping

Applied Physics Express

Volumn 2, Issue 3, 2009, Pages

  Nanjo, Takuma ^a   Suita, Muneyoshi ^a   Oislni, Toshiyuki ^a   Abe, Yuji ^a   Yagyu, Eiji ^a   Yoshiara, Kiichi ^a   Tokuda, Yasunori ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DRAIN CURRENT; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; ION BOMBARDMENT; ION IMPLANTATION; OHMIC CONTACTS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; TWO DIMENSIONAL ELECTRON GAS;

AIGAN/GAN; CHANNEL LAYERS; IMPLANTATION DOPING; SHEET CARRIER CONCENTRATIONS; SPACER LAYERS; WIDE BAND GAPS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 62549159636     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.031003     Document Type: Article

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