Electrical properties of wafer-bonded GaAs/Si heterojunctions

Applied Physics Letters

Volumn 73, Issue 16, 1998, Pages 2337-2339

  Zhou, Y C ^a   Zhu, Z H ^a   Crouse, D ^a   Lo, Y H ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001570262     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122454     Document Type: Article

References (9)

1. F. E. Ejeckam, C. L. Chua, Z. H. Zhu, Y. H. Lo, M. Hong, and R. Bhat, Appl. Phys. Lett. 67, 3936 (1995).
2. B. F. Levine, A. R. Hawkins, S. Hiu, B. J. Tseng, J. P. Reilley, C. A. King, L. A. Gruzke, R. W. Jonhson, D. R. Zolnowski, and J. E. Bowers, Appl. Phys. Lett. 71, 1507 (1997).
3. B. E. Roberds, K. D. Choquette, K. M. Geib, S. H. Kravitz, R. D. Twesten, and S. N. Farrens, Proc. Electrochem. Soc. 97-36, 592 (1997).
4. T. R. Chung, L. Yang, N. Hosoda, H. Takagi, and T. Suga, Appl. Surf. Sci. 117/118, 808 (1997).
5. Z. H. Zhu, F. E. Ejeckam, Y. Qian, J. Zhang, Z. Zhgan, G. L. Christenson, and Y. H. Lo, IEEE J. Sel. Top. Quantum Electron. 3, 927 (1997).
6. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
7. Heterojunction Band Discontinuities, edited by F. Capasso and G. Margaritondo (North-Holland, Amsterdam, 1987).
8. A. V. Eroshkin and V. N. Laktyushkin, Sov. Phys. Semicond. 22, 1013 (1988).
9. R. S. List and W. E. Spicer, J. Vac. Sci. Technol. B 6, 1228 (1988).