Improving the etch selectivity of ZrO2 thin films over Si by using high density plasma

Ferroelectrics

Volumn 384, Issue 1 PART 5, 2009, Pages 47-55

  Woo, Jong Chang ^a   Kim, Gwan Ha ^a   Kim, Dong Pyo ^a   Um, Doo Seung ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

CF4; Etching; HDP; XPS; ZrO2

Indexed keywords

CHAMBER PRESSURE; ETCH MECHANISM; ETCH RATES; ETCH SELECTIVITY; ETCHED SURFACE; ETCHING CHARACTERISTICS; ETCHING PARAMETERS; GAS MIXING RATIO; HIGH DENSITY PLASMAS; OXIDE BONDS; VOLATILE REACTIONS; XPS; ZRO2 THIN FILMS;

CHEMICAL REACTIONS; ETCHING; ION BOMBARDMENT; IONS; PERMITTIVITY; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; ZIRCONIUM ALLOYS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77749304213     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190902892766     Document Type: Conference Paper

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