High speed anisotropic dry etching of CoNbZr for next generation magnetic recording

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3462-3466

  Andriesse, M S P ^a   Zijlstra, T ^a   Van Der Drift, E ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BINDING ENERGY; DESORPTION; DRY ETCHING; MAGNETIC RECORDING; PLASMA ETCHING; STOICHIOMETRY; ULTRAVIOLET RADIATION;

INDUCTIVELY COUPLED PLASMA;

COBALT ALLOYS;

EID: 0034317290     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1313577     Document Type: Article

References (28)

1. R. Hsiao, IBM J. Res. Dev. 43, 89 (1999).
2. Y. Shimada, Phys. Status Solidi B 83, 255 (1984).
3. J. K. Howard, J. Vac. Sci. Technol. A 4, 1 (1986).
4. A. J. van Roosmalen, J. A. G. Baggerman, and S. H. J. Brader, Dry Etching for VLSI (Plenum, New York, 1991).
5. K. B. Jung, J. W. Lee, Y. D. Park, J. A. Caballero, J. R. Childress, and S. J. Pearton, J. Vac. Sci. Technol. A 15, 1780 (1997).
6. B. Khamsehpour, C. D. W. Wilkinson, J. N. Chapman, and A. B. Johnston, J. Vac. Sci. Technol. B 14, 3361 (1996).
7. K. B. Jung, E. S. Lambers, J. R. Childress, S. J. Pearton, M. Jenson, and A. T. Hurst, J. Vac. Sci. Technol. A 16, 1697 (1998).
8. K. B. Jung, H. Cho, Y. B. Hahn, D. C. Hays, T. Feng, Y. D. Park, J. R. Childress, and S. J. Pearton, Mater. Sci. Eng., B 60, 101 (1999).
9. H. Cho et al., Appl. Surf. Sci. 140, 215 (1999).
10. F. C. M. J. van Delft, J. Magn. Magn. Mater. 140-144, 2203 (1995).
11. K. Ichihara and M. Hara, Jpn. J. Appl. Phys., Part 1 36, 4874 (1997).
12. K.-S. Choi and C.-H. Han, J. Electrochem. Soc. 145, L37 (1998).
13. N. Hosoi and Y. Oshita, Appl. Phys. Lett. 63, 2703 (1993).
14. M. S. Kwon and J. Y. Lee, J. Electrochem. Soc. 146, 3119 (1999).
15. J. A. G. Baggerman, R. J. Visser, and E. J. H. Collart, J. Appl. Phys. 75, 758 (1994).
16. A. Manenschijn, E. van der Drift, G. C. A. M. Janssen, and S. Radelaar, J. Appl. Phys. 69, 7996 (1991).
17. C. Steinbrüchel, Appl. Phys. Lett. 55, 1960 (1989).
18. F. C. M. J. M. van Delft and J. B. Giesbers, J. Nucl. Mater. 200, 366 (1993).
19. 9F. Fracassi, R. d'Agostino, R. Lamendola, A. Filippo, C. Rapisarda, and P. Vasquez, J. Electrochem. Soc. 143, 701 (1996).
20. R. Petri, D. Henry, J.-M. Francou, N. Sadeghi, and M. Yayer-Besançon, J. Appl. Phys. 75, 1171 (1994).
21. M. M. Chun and Y. H. Lee, J. Electrochem. Soc. 131, 2118 (1984).
22. H. F. Winters, J. Vac. Sci. Technol. A 3, 786 (1985).
23. H. F. Winters and Ch. Steinbüchel, Appl. Phys. Lett. 59, 914 (1991).
24. E. van der Drift, T. Zijlstra, R. Cheung, K. Werner, and S. Radelaar, Microelectron. Eng. 23, 343 (1994).
25. E. van der Drift, B. Q. Dinh, P. A. Verhoeven, E. J. M. Fakkeldij, and T. Zijlstra, J. Vac. Sci. Technol. B 15, 2676 (1997).
26. H. Raaf and N. Schwentener, Appl. Surf. Sci. 138-139, 271 (1999).
27. O. Knacke, O. Kubaschewski, and K. Hesselman, Thermodynamical Properties of Inorganic Substances, 2nd ed. (Springer, Heidelberg, 1991).
28. J.-L. Lin, M. B. Freiler, M. Levy, R. M. Osgood, D. Collins, and T. C. McGill, Appl. Phys. Lett. 67, 3563 (1995).