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Volumn 96, Issue 8, 2010, Pages

Controllability of threshold voltage in Ag-doped ZnO nanowire field effect transistors by adjusting the diameter of active channel nanowire

(5) Kim, Kyoungwon a,b Debnath, Pulak Chandra a Park, Dong Hoon a Kim, Sangsig b Lee, Sang Yeol a

a Korea Institute of Science and Technology (South Korea)

b Korea University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNELS; DEPLETION MODES; DOPED ZNO; ENHANCEMENT MODES; ON/OFF RATIO; SAPPHIRE SUBSTRATES; SUBTHRESHOLD SWING; TRANSFER CHARACTERISTICS; ZINC OXIDE NANOWIRES;

CARRIER CONCENTRATION; MESFET DEVICES; NANOWIRES; PULSED LASER DEPOSITION; PULSED LASERS; SILVER; SILVER OXIDES; THRESHOLD VOLTAGE; ZINC; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 77749279727 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3327826 Document Type: Article

Times cited : (36)

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