Field-effect-tuned lateral organic diodes

Proceedings of the National Academy of Sciences of the United States of America

Volumn 107, Issue 9, 2010, Pages 3972-3976

  Dhar, Bal Mukund ^a   Kini, Geetha S ^b   Xia, Guoqiang ^b   Jung, Byung Jun ^a   Markovic, Nina ^b   Katz, Howard E ^a  

^a Department of Materials Science and Engineering ^*  (United States)

^b JOHNS HOPKINS UNIVERSITY   (United States)

Author keywords

Built in potential; Organic semiconductor; p n junction; Rectification; Scanning kelvin probe microscopy

Indexed keywords

ARTICLE; DEVICE; DIODE; ELECTRIC POTENTIAL; ELECTRODE; ELECTRON; FIELD EFFECT TRANSISTOR; PHYSICS; PRIORITY JOURNAL; SEMICONDUCTOR; SURFACE PROPERTY; TRANSPORT KINETICS;

EID: 77749233941     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.0910554107     Document Type: Article

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