Electrical characteristics of lateral heterostructure organic field-effect bipolar transistors

Applied Physics Letters

Volumn 94, Issue 1, 2009, Pages

  Singh, Samarendra P ^a   Sonar, Prashant ^a   Sellinger, Alan ^a,b   Dodabalapur, Ananth ^a,c  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b Stanford University   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS;

ACTIVE LAYERS; BALANCED ELECTRONS; ELECTRICAL CHARACTERISTICS; HETEROSTRUCTURE; HOLE INJECTIONS; SEMI-CONDUCTORS; SOURCE AND DRAINS; STEADY STATES; TRANSFER CHARACTERISTICS; TWO MATERIALS;

TRANSISTORS;

EID: 58149496482     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3064160     Document Type: Article

References (21)

1. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99 3.0.CO;2-9 14, 99 (2002).
2. J. Zaumseil and H. Sirringhaus, Chem. Rev. (Washington, D.C.) 0009-2665 10.1021/cr0501543 107, 1296 (2007).
3. J. Anthony, Chem. Rev. (Washington, D.C.) 0009-2665 10.1021/cr050966z 106, 5028 (2006).
4. A. Facchetti, M. Mushrush, H. E. Katz, and T. J. Marks, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma.200390003 15, 33 (2003).
5. B. Crone, A. Dodabalapur, Y. Y. Lin, R. W. Filas, Z. Bao, A. LaDuca, R. Sarpeshkar, H. E. Katz, and W. Li, Nature (London) 0028-0836 10.1038/35000530 403, 521 (2000).
6. F. Cicoira and C. Santato, Adv. Funct. Mater. 1616-301X 10.1002/adfm.200700174 17, 3421 (2007).
7. A. Dodabalapur, Z. Bao, A. Makhija, J. G. Laquindanum, V. R. Raju, Y. Feng, H. E. Katz, and J. Rogers, Appl. Phys. Lett. 0003-6951 10.1063/1.121736 73, 142 (1998).
8. C. T. Kuo, and S. Z. Weng, Polym. Adv. Technol. 1042-7147 10.1002/pat.242 13, 753 (2002).
9. L. Wang, D. Fine, D. Sharma, L. Torsi, and A. Dodabalapur, Anal. Bioanal. Chem. 1618-2642 10.1007/s00216-005-0150-2 384, 310 (2005).
10. M. Berggren and A. Richter-Dahlfors, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma.200700419 19, 3201 (2007).
11. J. T. Mabeck and G. G. Malliaras, Anal. Bioanal. Chem. 1618-2642 10.1007/s00216-005-3390-2 384, 343 (2005).
12. A. Dodabalapur, H. E. Katz, L. Torsi, and R. C. Haddon, Science 0036-8075 10.1126/science.269.5230.1560 269, 1560 (1995).
13. A. Babel, J. D. Wind, and S. A. Jenekhe, Adv. Funct. Mater. 1616-301X 10.1002/adfm.200305180 14, 891 (2004).
14. L. -L. Chua, J. Zaumseil, J. -F. Chang, E. C.-W. Ou, P. K.-H. Ho, H. Sirringhaus, and R. H. Friend, Nature (London) 0028-0836 10.1038/nature03376 434, 194 (2005).
15. K. F. Brennan and A. S. Brown, Theory of Modern Electronic Semiconductor Devices (Wiley, New York, 2002).
16. S. De Vusser, S. Schols, S. Steudel, S. Verlaak, J. Genoe, W. D. Oosterbaan, L. Lutsen, D. Vanderzande, and P. Heremans, Appl. Phys. Lett. 0003-6951 10.1063/1.2392937 89, 223504 (2006).
17. I. G. Hill and A. Kahn, J. Appl. Phys. 0021-8979 10.1063/1.371018 86, 2116 (1999).
18. H. E. Katz, A. J. Lovinger, and J. G. Laquindanum, Chem. Mater. 0897-4756 10.1021/cm970627p 10, 457 (1998).
19. P. Sonar, S. P. Singh, S. Sudhakar, A. Dodabalapur, and A. Sellinger, Chem. Mater. 20, 3184 (2008). 0897-4756
20. J. G. Laquindanum, H. E. Katz, A. Dodabalapur, and A. J. Lovinger, J. Am. Chem. Soc. 0002-7863 10.1021/ja962461j 118, 11331 (1996).
21. S. Tatemichi, M. Ichikawa, T. Koyama, and Y. Taniguchi, Appl. Phys. Lett. 0003-6951 10.1063/1.2349290 89, 112108 (2006).