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Applied Physics A: Materials Science and Processing

Volumn 98, Issue 4, 2010, Pages 777-785

Specificity of defects induced in silicon by RF-plasma hydrogenation

(8) Ghica, C a Nistor, L C a Stefan, M a Ghica, D a Mironov, B a Vizireanu, S b Moldovan, A b Dinescu, M b

a NATIONAL INSTITUTE OF MATERIALS PHYSICS (Romania)

b NATIONAL INSTITUTE FOR LASER (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS INDUCED; ELECTRON PARAMAGNETIC RESONANCE; EXPERIMENTAL CONDITIONS; EXTENDED DEFECT; FREE SURFACES; HYDROGENATION PROCESS; NANOMETRICS; PLANAR DEFECT; PLASMA TREATMENT; RF PLASMA; SI WAFER; STRUCTURAL DEFECT; SURFACE CORRUGATIONS; TREATMENT CONDITIONS; TREATMENT DURATION;

ATOMIC FORCE MICROSCOPY; ELECTRON RESONANCE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROGEN; HYDROGENATION; PARAMAGNETIC RESONANCE; PARAMAGNETISM; PLASMA APPLICATIONS; PLASMAS; POINT DEFECTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE ROUGHNESS;

SURFACE DEFECTS;

EID: 77649244069 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-009-5527-1 Document Type: Article

Times cited : (12)

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