The effects of the annealing temperature on the formation of helium-filled structures in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 329-333

  Fichtner, P F P ^a   Kaschny, J R ^a   Behar, M ^a   Yankov, R A ^b   Mucklich A ^b   Skorupa, W ^b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Defects; He bubbles; Ion implantation; Silicon

Indexed keywords

ANNEALING; BUBBLE FORMATION; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; HELIUM; ION IMPLANTATION; MORPHOLOGY; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

MICROSCOPIC CAVITIES;

SEMICONDUCTING SILICON;

EID: 0033513725     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00714-9     Document Type: Article

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