Formation process and electrical property of IrO2 thin films prepared by reactive sputtering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 1, 2003, Pages 213-216

  Ishikawa, Takeshi ^a   Abe, Yoshio ^a   Kawamura, Midori ^a   Sasaki, Katsutaka ^a  

^a KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Chemical binding state; Crystal structure; Formation process; Ir; IrO2; Plasma emission; Resistivity; Sputtering

Indexed keywords

ARGON; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; IRIDIUM; IRIDIUM COMPOUNDS; MAGNETRON SPUTTERING; OXIDATION; OXYGEN; PARTIAL PRESSURE; TEMPERATURE;

CHEMICAL BINDING STATE; FORMATION PROCESS; HIGH DEPOSITION RATE OXIDE REGION; LOW DEPOSITION RATE OXIDE REGION; PLASMA EMISSION; REACTIVE SPUTTERING;

THIN FILMS;

EID: 0037667790     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.213     Document Type: Article

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