AlGaN-based linear array for UV solar-blind imaging from 240 to 280 nm

IEEE Sensors Journal

Volumn 6, Issue 4, 2006, Pages 957-962

  Mazzeo, Giovanni ^a   Reverchon, Jean Luc ^a   Duboz, Jean Yves ^b   Dussaigne, A ^b  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b CNRS   (France)

Author keywords

AlGaN; Metal semiconductor metal (MSM); Ultraviolet (UV) detectors; UV imaging

Indexed keywords

ALUMINUM; ARRAYS; GALLIUM; IMAGE PROCESSING; MATHEMATICAL MODELS; OPTIMIZATION; PHOTODETECTORS; POLARIZATION; SEMICONDUCTOR MATERIALS; TRANSFER FUNCTIONS; VISIBILITY;

ALGAN; METAL-SEMICONDUCTOR-METAL (MSM); ULTRAVIOLET (UV) DETECTORS; UV IMAGING;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33746864943     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2006.877951     Document Type: Article

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