IrO2 Schottky contact on n-type 4H-SiC

Applied Physics Letters

Volumn 82, Issue 26, 2003, Pages 4726-4728

  Han, Sang Youn ^a   Jang, Ho Won ^a   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; IRIDIUM COMPOUNDS; LEAKAGE CURRENTS; OXIDATION; SCHOTTKY BARRIER DIODES; THERMODYNAMIC STABILITY;

CONTACT LAYERS;

SILICON CARBIDE;

EID: 0038782449     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1588365     Document Type: Article

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