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Materials Science and Engineering: B

Volumn 122, Issue 3, 2005, Pages 196-200

Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN layer for the UV-B (280-320 nm) detection

(4) Liu, Su Sir a Li, Pei Wen a Lan, W H b Lin, Wen Jen c

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

b NATIONAL UNIVERSITY OF KAOHSIUNG (Taiwan)

c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

Responsivity; SIMS; UV sensor

Indexed keywords

ELECTRIC RESISTANCE; ETCHING; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; STRUCTURE (COMPOSITION); ULTRAVIOLET DETECTORS; ULTRAVIOLET SPECTROSCOPY;

ETCHING PIT DENSITY (EPD); GRADED LAYER DESIGN; RESPONSIVITY; UV SENSORS;

SENSORS;

EID: 24144491587 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2005.06.009 Document Type: Article

Times cited : (10)

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