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Materials Science and Engineering: B

Volumn 75, Issue 2-3, 2000, Pages 232-235

Elastic strain in InGaN and AlGaN layers

(10) Wu, M F a,b Yao, Shude a Vantomme, A b,d Hogg, S b Langouche, G b Van Der Stricht, W c Jacobs, K c Moerman, I c Li, J a Zhang, G Y a

a PEKING UNIVERSITY (China)

b KU LEUVEN (Belgium)

c GHENT UNIVERSITY (Belgium)

d FUND FOR SCIENTIFIC RESEARCH (Belgium)

Author keywords

AlGaN; Elastic strain; InGaN; Rutherford backscattering channelling; X ray diffraction

Indexed keywords

EID: 0012751623 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(00)00371-8 Document Type: Article

Times cited : (15)

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