In situ second-harmonic generation measurements of the stability of Si(111)-H and kinetics of oxide regrowth in ambient

Journal of Applied Physics

Volumn 95, Issue 9, 2004, Pages 4675-4680

  Bodlaki, D ^a   Borguet, E ^a  

^a UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-RESOLUTION ELECTRON ENERGY-LOSS SPECTRA (HREELS); LOGARITHMIC OXIDE GROWTH; SECOND-HARMONIC GENERATION ROTATIONAL ANISOTROPY (SHG-RA);

ANISOTROPY; CHEMICAL BONDS; CMOS INTEGRATED CIRCUITS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELLIPSOMETRY; FILM GROWTH; OXIDATION; PASSIVATION; PHOTONS; REACTION KINETICS; SECOND HARMONIC GENERATION; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON WAFERS;

EID: 2442474300     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1664024     Document Type: Article

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