Preparation of an ultraclean and atomically controlled hydrogen-terminated Si(111)-(1×1) surface revealed by high resolution electron energy loss spectroscopy, atomic force microscopy, and scanning tunneling microscopy: Aqueous NH4F etching process of Si(111)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 9 A, 2007, Pages 5701-5705

  Kato, Hiroki ^a   Taoka, Takumi ^a   Nishikata, Susumu ^b   Sazaki, Gen ^b   Yamada, Taro ^a,c   Czajka, Ryszard ^a,d   Wawro, Andrzej ^a,e   Nakajima, Kazuo ^b   Kasuya, Atsuo ^a   Suto, Shozo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^d POZNAN UNIVERSITY OF TECHNOLOGY   (Poland)

^e INSTITUTE OF PHYSICS   (Poland)

Author keywords

AFM; HREELS; Hydrogen termination; Silicon; STM

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISSOLVED OXYGEN; ELECTRON ENERGY LOSS SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SURFACE MORPHOLOGY; SURFACE PROPERTIES; WET ETCHING;

ETCHING TIME; HYDROGEN TERMINATION; ULTRACLEAN SURFACES; VIBRATIONAL PROPERTIES;

SEMICONDUCTING SILICON;

EID: 34548723451     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.5701     Document Type: Article

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