Bistable molecules development and Si surface grafting: Two chemical tools used for the fabrication of hybrid molecule/Si CMOS component

International Journal of Nanotechnology

Volumn 7, Issue 4-8, 2010, Pages 719-737

  Duclairoir, Florence ^a   Dubois, Lionel ^a   Calborean, Adrian ^a   Fateeva, Alexandra ^a   Fleury, BenoÎt ^a   Kalaiselvan, Anbarasan ^b   Marchon, Jean Claude ^a   Maldivi, Pascale ^a   Billon, Martial ^c   Bidan, Gerard ^d   De Salvo, Barbara ^e   Delapierre, Guillaume ^e   Buckley, Julien ^e   Huang, Kai ^e   Barattin, Régis ^e   Pro, Tiziana ^e  

^a UNIV GRENOBLE ALPES   (France)

^b ANNA UNIVERSITY   (India)

^c CNRS   (France)

^d Central Division   (France)

^e CEA GRENOBLE   (France)

Author keywords

Covalent grafting on Si; Electrochemistry on Si; Functionalised porphyrins; Hybrid molecule Si CMOS components; Molecular memories

Indexed keywords

CHARGE TRANSFER; CMOS INTEGRATED CIRCUITS; FABRICATION; MOLECULES; PORPHYRINS; REDOX REACTIONS;

COVALENT GRAFTING; ELECTRICAL PERFORMANCE; HYBRID MOLECULES; MEMORY RETENTION; MOLECULAR MEMORY; MOLECULAR PROPERTIES; REDOX ACTIVE MOLECULES; SI CMOS;

GRAFTING (CHEMICAL);

EID: 77649093407     PISSN: 14757435     EISSN: None     Source Type: Journal    
DOI: 10.1504/IJNT.2010.031741     Document Type: Article

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