Molecular wires, switches, and memories

Annals of the New York Academy of Sciences

Volumn 960, Issue , 2002, Pages 69-99

  Chen, J ^a,e   Wang, W ^a   Klemic, J ^a   Reed, M A ^a   Axelrod, B W ^b   Kaschak, D M ^b   Rawlett, A M ^c,f   Price, D W ^c   Dirk, S M ^c   Tour, J M ^c   Grubisha, D S ^d   Bennett, D W ^d  

^a Yale University   (United States)

^b Molecular Electronics Corporation   (United States)

^c RICE UNIVERSITY   (United States)

^d UNIVERSITY OF WISCONSIN MILWAUKEE   (United States)

^e IBM   (United States)

^f MOTOROLA INC   (United States)

Author keywords

Erasable and programmable molecular memory cell; Metal molecule metal junctions; Molecular devices; Molecular electronics; Molecular memories; Molecular switches; Molecular wires; Negative differential resistance

Indexed keywords

1,4 PHENYLENE DIISOCYANIDE; CYANIDE; METAL; UNCLASSIFIED DRUG;

CONFERENCE PAPER; DEVICE; ELECTRONICS; MOLECULE; NANOTECHNOLOGY; OXIDATION REDUCTION REACTION;

EID: 11144356755     PISSN: 00778923     EISSN: None     Source Type: Book Series    
DOI: 10.1111/j.1749-6632.2002.tb03026.x     Document Type: Conference Paper

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