Rare-earth based oxide and nitride thin films employing volatile homoleptic guanidinate precursors

ECS Transactions

Volumn 25, Issue 8 PART 1, 2009, Pages 143-150

  Milanov, A P ^a   Thiede, T ^a   Hellwig, M ^a   Parala, H ^a   Bock, C ^a   Becker, H W ^a   Ngwashi, D K ^b   Cross, R B M ^b   Paul, S ^a   Kunze, U ^a   Fischer, R A ^a   Devi, A ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; CRYSTALLINITIES; DEPOSITION TEMPERATURES; FILM PROPERTIES; GROWTH CHARACTERISTIC; GUANIDINATES; HOMOLEPTIC; METAL ORGANIC COMPOUND; MOCVD; MULTI-TECHNIQUE APPROACH; NITRIDE THIN FILMS; OPTICAL AND ELECTRICAL PROPERTIES; REDUCED PRESSURE; SEM; SINGLE-SOURCE PRECURSOR; SUBSTRATE TEMPERATURE; XRD;

ELECTRIC PROPERTIES; FILM GROWTH; GADOLINIUM; NITRIDES; OPTICAL PROPERTIES; OXIDE FILMS; OXYGEN; SURFACE ROUGHNESS; SURFACE STRUCTURE; THIN FILMS;

CHEMICAL VAPOR DEPOSITION;

EID: 76549107701     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3207585     Document Type: Conference Paper

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